微观组织的分析电子显微学表征（英文版）
出版时间：2012年版
内容简介
　　本收系统地介绍了分析电子显微学（AEM）的基本概念和操作技术，聚集于相恋和形变中位错的AEM研究。同时通过大量的例子阐述衍射晶体学的物理概念和数学分析方法，例如相变中位向关系的定量预测等，以便读者加深理解和拓展视野。
目录
Chapter 1　Analytical Electron Microscope (AEM)
　1.1　Brief introduction of AEM history
　1.2　Interaction between electrons and specimen and signals used byAEM
　1.3　Electron wavelength and electromagnetic lens
　　1.3.1　Electron wavelength
　　1.3.2　Electromagnetic lens
　1.4　Structure and function of AEM
　　1.4.1　Illumination system
　　1.4.2　Specimen holders
　　1.4.3　Imaging system
　　1.4.4　Image recording
　　1.4.5　Power supply system and vacuum system
　　1.4.6　Computer control　'
　1.5　The principle of imaging, magnifying and diffracting
　1.6　Theoretical resolution limit
　1.7　Depth of focus and depth of field
　1.8　Spherical aberration-c0rrected TEMs　References　
Chapter 2　Specimen Preparation
　2.1　Traditional techniques
　　2.1.1　Replica
　　2.1.2　Preparation of powders
　　2.1.3　Film preparation for plan view
　　2.1.4　Film preparation from a bulk metallic sample .
　　2.1.5　Film preparation from a bulk nonmetaltic sample.
　2.2　Special techniques　
　　2.2.1　Cross-sectional specimen preparation
　　2.2.2　Cleaving and small angle cleavage technique
　　2.2.3　Ultramicrotomy
　　2.2.4　Focused ion beam technique　References
Chapter 3　Electron Diffraction
　3.1　Comparison of electron diffraction with X-raydiffraction
　3.2　Conditions of diffraction
　　3.2.1　Geometric condition
　　3.2.2　Physical condition
　　3.2.3　Diffraction deviating from exact Bragg Condition
　3.3　Basic equation used for analysis of electron diffractionpattern
　 3.3.1　Diffraction in an electron diffractometer
　 3.3.2　Diffraction in a TEM
　3.4　Principle and operation of selected area electrondiffraction
　3.5　Rotation of image relative to diffraction pattern
　3.6　Diffraction patterns of polycrystal and theirapplications
　　3.6.1　Formation and geometric features of diffraction patternsfor polycrystal
　　3.6.2　Applications of ring patterns
　3.7　Geometric features of diffraction patterns of singlecrystals
　　3.7.1　Geometric features and diffraction intensity of a singlecrystal pattern
　　3.7.2　Indexing methods of single crystal diffractionpatterns　
　3.8　Main applications of single crystal pattern
　　3.8.1　Identification of phases
　　3.8.2　Determination of orientation relationship
　3.9　Diffraction spot shift by stacking faults and determination ofstacking fault probability
　　3.9.1　Diffraction from planar defect
　　3.9.2　Determination of stacking fault probability in HCPcrystal
　　3.9.3　Determination of stacking fault probability in FCCcrystal
　3.10　Systematic tilting technique and its applications
　　3.10.1　Systematic tilting technique by double tilt holder.
　　3.10.2　Determination of electron beam direction
　……
Chapter 4 Mathematics Analysis in Electron Diffraction andCrystallography
Chapter 5 Diffraction Contrast
Chapter 6 high Resolution and High Spatial Resolution of Analyticaelectron Microscopy
Appendix
Index